Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests

نویسنده

  • M. A. Belaïd
چکیده

Article history: Received 22 May 2015 Received in revised form 30 June 2015 Accepted 1 July 2015 Available online xxxx

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hot carrier reliability of RF N- LDMOS for S Band radar application

This paper presents an innovative reliability bench specifically dedicated to high RF power device lifetime tests under pulse conditions for radar application. A base-station dedicated LDMOS transistor has been chosen for RF lifetests and a complete device electric characterization has been performed. A whole review of its critical electrical parameters after accelerated ageing tests is propose...

متن کامل

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

This paper reports novel methods for accelerated ageing tests, with comparative reliability between them for stresses applied on power RF LDMOS: Thermal Shock Tests (TST), Thermal Cycling Tests (TCT), High Voltage Drain (HVD) and coupling thermal and electrical effects under various conditions. The investigation findings obtained after various ageing tests show the degradation and the device’s ...

متن کامل

A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications

A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear wit...

متن کامل

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test) and high temperature storage life (HTSL). The two first tests are carried out with a drain current flowing through the device during stress. The investi...

متن کامل

Robustness Evaluation Study of Power RF LDMOS Devices after Thermal Life Tests

This paper presents a synthesis of robustness evaluation on power RF LDMOS devices and its relation with electrical and physical behaviours after RF life-tests. It is important to understand the physical degradation mechanism effects and the liaison on drifts of critical electrical parameters after life ageing tests, in I-V such as threshold voltage (Vth), the feedback capacitance (Crss) in C-V...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Microelectronics Reliability

دوره 55  شماره 

صفحات  -

تاریخ انتشار 2015